The stumbling block to developing graphene electronics has been the inability to produce a semiconducting form of graphene. Researchers at the Georgia Tech MRSEC have finally found a solution to this elusive goal, graphene bent over SiC steps. This semiconducting graphene can operate at temperatures above 200 C and is easily scalable to industrial fabrication.
Controlling physical and chemical features on the nanoscale is crucial for devices based on nanotechnology as well for basic science. At Georgia Tech, we have made key breakthroughs in the controlled production of materials for nanoscience.
By fabricating graphene structures atop nanometer-scale “steps” etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics.
Normalized X-ray Absorption Spectroscopy (XAS) of an as-grown (blue) and 2.0 V biased (green) LiNbO2 memristor. Five regions are collected across the device where the spectra labeled “1” is closest to the positively biased contact and the spectra labeled “5” is closest to the grounded contact of the device.
The GT MRSEC has expanded its international collaborative graphene research. Five new groups from France and Germany will now participate in the development of graphene electronics.
Multilayer graphene grown at Georgia Tech to heights of 1 to 10 nanometers contains non-graphitic “twists” between layers. Our recent theory describes the top layer as a single, effectively isolated graphene sheet. The remaining multilayer creates a periodically varying mass of the top-layer electrons: from positive, to zero, to negative(!).
The stumbling block to developing graphene electronics has been the inability to produce a semiconducting form of graphene. Researchers at the Georgia Tech MRSEC have finally found a solution to this elusive goal, graphene bent over SiC steps. This semiconducting graphene can operate at temperatures above 200 C and is easily scalable to industrial fabrication.
Controlling physical and chemical features on the nanoscale is crucial for devices based on nanotechnology as well for basic science. At Georgia Tech, we have made key breakthroughs in the controlled production of materials for nanoscience.
By fabricating graphene structures atop nanometer-scale “steps” etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics.
Multilayer graphene grown at Georgia Tech to heights of 1 to 10 nanometers contains non-graphitic “twists” between layers. Our recent theory describes the top layer as a single, effectively isolated graphene sheet. The remaining multilayer creates a periodically varying mass of the top-layer electrons: from positive, to zero, to negative(!).