Fabrication of a Non-volatile Multiferroic Memory Device @ University of Maryland

Author(s):

I. Takeuchi

Micron-sized non-volatile magnetoresistance devices are being pursued using ferroelectric/magnetostrictive multilayers.

Previously, we have demonstrated reversible ferroelastic domains in PZT ferroelctric bilyaers (Adv. Materials 21, 3497 (2009)). In such bilayers, different elastic states can be achieved through reversible twin boundary motions induced by small voltage pulses. The elastic states are used to tune magnetic anisotropy in FeGa layer.