Imaging ‘Invisible’ Dopant Atoms in Semiconductor Nanocrystals @ University of Minnesota

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January 19, 2012 :: Highlight from IRG4

Author(s):

Aloysius Gunawan, Andre Mkhoyan(UMN),  David Norris (ETH, Zurich)

In semiconductor nanocrystals, the physical effects of deliberately included impurities, called dopants, may depend on the dopant position with the crystal.  To date, there has not been an effective technique to determine the location of individual dopant atoms in nanocrystals. IRG-4 researchers demonstrated that a combination of scanning transmission electron microscopy and electron energy loss spectroscopy can be used to reveal the position of such “invisible” dopants.

 

Imaging ‘Invisible’ Dopant Atoms in Semiconductor Nanocrystals

Related publication(s):

  1. Gunawan et al., Nano Letters 2011, 11, 5553-5557