Imaging ‘Invisible’ Dopant Atoms in Semiconductor Nanocrystals

In semiconductor nanocrystals, the physical effects of deliberately included impurities, called dopants, may depend on the dopant position with the crystal.  To date, there has not been an effective technique to determine the location of individual dopant atoms in nanocrystals. IRG-4 researchers demonstrated that a combination of scanning transmission electron microscopy and electron energy loss spectroscopy can be used to reveal the position of such “invisible” dopants.