Impact of interfacial bonding on oxide functionality @ Yale University

Author(s):

A.M. Kolpak, J.W. Reiner, M. Sawicki, C. Broadbridge, D. Su, Y. Zhu, C.H. Ahn, F.J. Walker, and S. Ismail-Beigi (Yale University, Southern Connecticut State University, Brookhaven National Laboratory)

Transition metal oxides exhibit many properties that can be harnessed in novel devices. For example, an epitaxial ferroelectric on silicon enables a nonvolatile transistor that remembers its state without continuous power consumption. A critical question is how the oxide/silicon interface affects the oxide functionality.