MoO3 Films for Efficient Hole-Injection in Organic Electronics

June 22, 2011

MRSEC center: 
Princeton University
Author(s) with affiliations: 
<p>J. Meyer, R. Khalandovsky, P. Görrn and A. Kahn, Princeton Universiy</p>
URL on your MRSEC website: 
http://www.princeton.edu/~pccm/highlight-2010-B-moo3films%20.pdf

Transition-metal oxides (TMO), such as molybdenum tri-oxide (MoO3), are promising hole-injection electrode materials for organic electronics because of their large work function and high conductivity. They are superior to the widely used organic polymer PEDOT:PSS which causes device degradation. However, deposition of MoO3 layers from high-temperature sources is problematical for flexible organic-based electronics.

AFM image of a film of MoO3 nanoparticles

Fig. 1  AFM image of a film of MoO3 nanoparticles

Kahn et al. have developed a low-temperature method to deposit TMO films using solution-based processing of nanoparticles of MoO3 [1]. The nanoparticles, in suspension in a solvent, are spin-coated onto the target substrate. The surfactant is then easily removed by a short plasma treatment (Fig. 1). The current-voltage characteristics of the deposited MoO3 layers compare well with thermally evaporated films, and are better than PEDOT:PSS (Fig. 2). With the rapid growth in the commercial applications of nanoparticles, this approach is promising for large-area manufacturing.

How hole-injection from ITO electrodes varies with different charge-transport layers

Fig. 2  How hole-injection from ITO electrodes varies with different charge-transport layers

 

 

 

J. Meyer, R. Khalandovsky, P. Görrn, A. Kahn, Adv. Mater., 23(1), 70-73 (2011).
IRG Group Number: 
B
Tagged: