Selective Epitaxial Graphene Growth on SiC via AIN Capping @ Georgia Institute of Technology
May 14, 2010
:
F. Zaman*, M. Moseley, and J. D. Meindl, School of Electrical and Computer Engineering, Georgia Institute of Technology
M. Rubio-Roy*, Y. Hu, C. Berger, and W. A. de Heer, School of Physics, Georgia Institute of Technology
AlN, deposited by molecular beam epitaxy and patterned by electron beam lithography, forms an effective capping layer for epitaxial graphene growth on C-face SiC.
Related publication(s):
- M. Rubio-Roy*, F. Zaman*, Y. Hu, C. Berger, M. Moseley, J. Meindl, and W. de Heer, “Structured Epitaxial Graphene Growth on SiC by Selective Graphitization using a Patterned AlN Cap,” Applied Physics Letters, vol. 96, issue 8, pp. 082112, February 2010.
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| GT MRSEC 0820382 Selective Epitaxial Graphene Growth Meindl.pdf |
