Ultrafast Relaxation of Hot Dirac Fermions in Epitaxial Graphene @ Georgia Institute of Technology
May 14, 2010
:
Dong Sun, Zong-Kwei Wu, Charles Divin and Theodore Norris Center for Ultrafast Optical Science, University of Michigan
Xuebin Li, Claire Berger, W. A. de Heer, and P. N. First, School of Physics, Georgia Institute of Technology
In high speed devices, electrons are accelerated to high energy by a high electric field; to understand device performance, it is important to know how those “hot” electrons relax by scattering with each other and with the environment (the graphene lattice and the SiC substrate).
Related publication(s):
- “Interlayer Thermal Coupling of Hot Dirac Fermions in Epitaxial Graphene,” APS March Meeting, Pittsburg, PA (2009)
| Attachment |
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| GT MRSEC 0820382 Ultrafast Relaxation of Hot Dirac Fermions Norris.pdf |
