The GT interdisciplinary research group (IRG) on Epitaxial Graphene (EG) is investigating the growth of EG layers on SiC for electronic device and circuit applications. These efforts include thermal- and non-thermal-assisted approaches for the growth of single and multiple layers of EG. Chemical modification of EG to control and vary properties is an integral part of atomic level EG material design. Fundamental material properties of EG are being studied to determine the ultimate capabilities of this novel material. Extensive materials characterization allows the fundamental relationships between growth conditions and the electrical, physical and chemical properties of EG to be established. Patterning and contact methodologies are being investigated to permit device fabrication and characterization. The primary goal of this work is the development of a new electronic material to serve as the successor to silicon for future (~2020) high speed/performance nanoelectronic devices and circuits.