IRG D: Quantum Control in Semiconductor Nanostructures @ Princeton University
The research in IRG-D is focused on quantum control in semiconductor nanostructures, with a particular emphasis on spins. We are currently pursuing experiments to determine spin coherence times in silicon devices, where the host material can be isotopically purified to eliminate the hyperfine interaction. Scanning tunneling microscopy is being used to probe magnetism in Mn doped GaAs samples by locally mapping the density of states in the material. Single electron and single photon devices are being fabricated using semiconductor nanowires and GaAs/AlGaAs heterostructures. We are also interested in developing new methods for control and detection of single spins in semiconductors. A milli-Kelvin scanning tunneling microscope with a spin-polarized tip and integrated rf measurement capabilities is under construction.
