The University of Delaware (UD) Materials Growth Facility (MGF) offers III-V and topological insulator (TI) growth of epitaxial semiconductor films. These growths are performed on a dual-chamber GENxplor molecular beam epitaxy (MBE) system. Our staff offers full-service material calibration and growth, as well as training to perform MBE deposition. The MGF is integrated into the Delaware Institute for Materials Research (DIMR), providing seamless materials growth, materials characterization, electron microscopy, and nanofabrication capabilities.
Facility Primary Contact: firstname.lastname@example.org