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Cameca LEAP Atom Probe at UW Madison

The
wide
range of instrumentation within the University of Wisconsin MRSEC Shared
Instrumentation Facilities (UW-MRSEC SIF) can now be accessed by academic and
industry users around the nation via the Materials Research Facilities Network
(MFRN.org).   A
Significant new addition
over
the past year is a
Cameca LEAP 3000 Si ATOM Probe.

The
Cameca LEAP 3000 SI atom probe
microscope was
installed in February 2014. The
Atom probe microscope (shown at the left) provides nano-scale surface, bulk and
interfacial materials analysis of simple and complex structures with
atom-by-atom identification and accurate spatial positioning, also known as
Atom Probe Tomography (APT).
The LEAP is expected to be used heavily by MRSEC researchers in all IRGs to
investigate the structure of interfaces at the nanoscale.

An
example of the power of the LEAP, Inoue et
al.1 have
investigated 3D dopant distributions in an n-MOSFET. Regions of the device
analyzed include the gate, gate oxide, channel, source/drain extension, and
halo. The atom map to the right shows the data set along with a TEM image of
the analyzed region of the transistor (inset). Arsenic atoms (in yellow) are
visible in the source/drain extension and on top of the gate electrode. The As
concentration in the source/drain extension was 2×1021
cm-3
with As atoms being detected to a depth of ~10 nm from the implanted Si
surface. B atoms (in white) can be seen in the Si substrate (channel and halo
extension regions),
the boron
concentration in the channel region was measured to be 1×1018
cm-3.