A multi-partner collaborative effort has focused on understanding semiconductor-oxide interfaces. This involves atomic layer precision in synthesis of the structures, correlating the structure and electronic properties using first principles, and obtaining subatomic resolution of structures from synchrotron x-ray diffraction a the Advanced Photon Source (Argonne National Laboratory) and electron micrsocopy (Brookhaven National Laboratory). The outcomes of these studies are critical for the design of ferroelectric field effect transistors.
