• Amorphous oxide semiconductors (AOS) provide superior performance and lower cost for next generation displays. However, instability under illumination remains a critical issue.
• In this work, the photoconductivity decay was investigated to deduce deep trap density.
• Traditional multi-exponential model is shown to fail in light of short time scales (days) in relation to natural time scales (months)
• Instead, stretched exponential (SE) model is shown to accurately predict correct long term photoresponse with significantly shorter measurement duration.
• Trap density as function of O2 doping is studied
