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Graphene-Insulator-Graphene Active THz Devices

Discovery: Graphene-based plasmonic structures composed of graphene-insulator-graphene can provide gain at THz
frequencies due to interplay between plasmons and resonant-tunneling.

Approach: Developed DC model of the
structure based on quantum phenomena, a transmission line equivalent model and
device analysis employing microwave circuit design techniques.

and Significance:
Demonstrated that graphene-insulator-graphene structures can provide stable
power gain (>7dB) at THz frequencies ( f > 2 THz), which is well above
the fT
of traditional high frequency electronic devices. The achievable power gain in
these structures can surpass what is possible in RTD gated-HEMT structures
employing traditional semiconductors.