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Novel multiferroic thin film memory devices

Electric-field tunable spin valves are being investigated


Exchange bias at ferromagnet/multiferroic interfaces has been studied for various thin film and bulk multiferroics including BiFeO3, TbMnO3, LuMnO3, and Cr2O3. Tunable spin valve structures are being explored. Magnetoresistance devices using BiFeO3 as the exchange biasing layer have been demonstrated.

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