Selective Epitaxial Graphene Growth on SiC via AIN Capping
May 14, 2010
AlN, deposited by molecular beam epitaxy and patterned by electron beam lithography, forms an effective capping layer for epitaxial graphene growth on C-face SiC.
Author(s) with affiliations:
F. Zaman*, M. Moseley, and J. D. Meindl, School of Electrical and Computer Engineering, Georgia Institute of Technology
M. Rubio-Roy*, Y. Hu, C. Berger, and W. A. de Heer, School of Physics, Georgia Institute of Technology