Jordan Greenlee, James Compagnoni, Cole Petersburg, Faisal Alamgir, W. Alan Doolittle
1) Department of Electrical and Computer Engineering, Georgia Tech 2) Department of Materials Science and Engineering, Georgia Tech
Analog memristors based on semiconducting LiNbO2 have been characterized using X-ray Absorption Spectroscopy (XAS). We have identified the underlying analog memristance mechanism as the gradual movement of lithium in the device in response to an applied bias. By identifying the physical memristance mechanism in analog LiNbO2 memristors, device modifications including the use of an electrolyte have been identified to vary the memory permanence of the device.