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Harnessing moiré ferroelectricity to modulate light emission from a semiconductor monolayer

  • A heterostructure consisting of a twisted hBN substrate and a semiconductor functional layer has been built, combining the properties of the two components
  • Twisted hBN substrates leads to ferroelectric domains due to inversion symmetry breaking at the interface; the electrostatic potential on the top surface may be used to modify properties of an adjacent layer
  • In the plane electric field at the domain walls separate the electron-hole pair and induces Stark shifted excitons
  • A global gate can erase and restore ferroelectric domains, leading to hysteresis and switching in light emission.
  • A demonstration of using remote moiré potential to modulate a functional layer, a key goal of the IRG 2