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Photoluminescence and Antiferromagnetism in the New Heteroanionic Material BaFMn0.5Te

Semiconductors with both magnetic and optoelectronic properties are relevant for novel spintronic devices. With the aim of discovering new magnetic semiconductors, NU-MRSEC IRG-2 performed synthesis investigations on mixed halide-chalcogenides, resulting in the discovery of the new compound BaFMn0.5Te. This heteroanionic material contains magnetic ions in a layered heterostructure with alternating positive [BaF]+ and negative [Mn0.5Te]- layers. An in situ powder X-ray diffraction study of the synthesis path was conducted to determine the formation mechanism of BaFMn0.5Te. BaFMn0.5Te has strong red photoluminescence (~700 nm) and concurrent antiferromagnetism below 90 K. Theoretical analysis indicates that both of these properties derive from the unique Mn atom ordering pattern and the mixed F/Te anion nature of the system. This work provides confirmation that heteroanionic materials can exhibit unexpected and rare combinations of properties.