Epitaxial Graphene’s Edge
Ming Ruan, Yike Hu, James Palmer, Tom Guo, John Hankinson, Rui Dong, Claire Berger, Walt de Heer School of Physics, Georgia Tech
Epitaxial graphene nanoribbons readily grow on the sidewalls of steps etched on silicon carbide crystals. These sidewall ribbons are found to have very low resistances that are due to electrons that move along the ribbon edges. These electrons are particularly immune to scattering in contrast to other electrons in the ribbon. The residual resistance appears to be quantized implying that the transport is ballistic. This very important effect of epitaxial graphene sidewall ribbons allows them be used as quantum interconnects in future graphene nanodevices.