Highlights

Understanding the transport of electrons in films of touching nanocrystals is of central importance for their future use in printed electronic devices such as light emitting diodes, solar cells, or transistors. The research team developed a new theory that describes the transition of the electron conduction in doped nanocrystal films from a semiconducting to a metallic behavior.

Objective:  Explore the potential for obtaining very high electron concentrations at the interface between two complex oxides and examine its relevance for terahertz (THz) applications.

Objective: Estimate spin-orbit coupling in in a wide variety of organic semiconductors. 

Objective: Train Utah MRSEC students to effectively present materials research.

How spinning electrons communicate across interfaces  

IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales. This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.

The goal of this seed project is to bring first-principles theory closer to experimental reality by accounting for the finite temperature effects that are essential for describing the behavior of “real-world” materials at their typical operating conditions.

Antiferromagnets are magnetically ordered materials which lack the net magnetization known for ferromagnets. In an antiferromagnet, spins arrange in opposing sublattices with mutually compensating magnetization. Not unlike ferromagnets, antiferromagnets can have domains. In a simple case, the domains are differentiated through spin reversal. Identifying a specific antiferromagnetic domain is a notoriously difficult experimental problem.