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A research team has created a new method to discover high-entropy oxides (HEOs), which are materials with unique properties due to their disorder. They combined computer simulations and experiments to efficiently explore different HEO compositions. By using advanced machine-learning techniques, they accurately predicted the stability of various HEOs, leading to the discovery of a new type containing calcium. This approach will soon be used to investigate more complex crystal structures for potential new applications.

A recent study revealed that m-terphenyl isocyanide ligands have different orientations when bonded to gold and silver surfaces—vertical on gold and flat on silver. This finding is important as it helps understand how surface ligands affect the properties of plasmonic nanoparticles. The research could lead to the development of new types of patterned nanoparticles, which would facilitate new self-assembly techniques, bridging the gap between inorganic materials and proteins.

A recent study showcased how boron-vacancy centers in hexagonal boron nitride can be used for quantum sensing. These defects allow for the detection of weak magnetic fields through their spin-sensitive light emissions. The researchers demonstrated the capability to optically detect specific magnetic wave behaviors in materials like yttrium iron garnet. This work positions boron-vacancy centers as a flexible tool for exploring various magnetic phenomena in new material systems.

Princeton co-hosted an inaugural NJ Regional Abacus Bee Math Competition in October 2023 that encourages blind and low vision students to practice their math skills.

In our system, a colloidal particle (upper left (a), red)  is trapped by optical tweezers (upper left (b)) as a surrounding colloidal suspension flows past.  Surprisingly, long range order develops in the particle density (lower left, dark bands are regions with over-representation of particles, sigma is the particle diameter).  A novel analysis of particle motions using a technique from computer science reveals the otherwise hidden flow patterns in the fluid surrounding the probe (right).

A new type of magnetoresistance called unidirectional magnetoresistance (UMR) has been discovered in a study that combines a topological semimetal (WTe₂) with a ferromagnetic semiconductor (Cr₂Ge₂Te₆). This phenomenon involves changes in resistance linked to magnetization reversal and spin interactions. The findings highlight how the unique properties of these materials can create distinct resistance states, which could be valuable for developing more advanced magnetic memory devices.

Novel double moiré system realized in a four-layer twist- controlled graphene structure. These double moiré twist-controlled structure goes beyond the single moiré structures generally investigated in twisted bilayer graphene or transition metal dichalecogenides. The results show that demonstrate that electronic confinement in multilayer graphene stacks can be compactly realized by changing the twist angles, in contrast to traditional band engineering that employ dissimilar materials. Furthermore, near the magic angle the flat bands host correlated insulators, which suggests that the proximity of one flat band does not suppress the correlated insulating states in the other flat band.

The Harvard MRSEC engages K-12 teachers and students through the science of everyday materials. Led by former HS teacher Strangfeld, the MRSEC hosts workshops for teachers and K-12 students that are modeled on the undergraduate Science and Cooking course developed by Weitz and Brenner, which is now led by Sörensen. In February 2025, Strangfeld and Sörensen, with the help of MRSEC researchers, piloted a 4-day program at Harvard for high school students during school break.

The Harvard MRSEC provides a vibrant culture of entrepreneurship and several recent Ph.D. students supported by Center IRGs and seed projects have co-founded new companies. 

Two-dimensional (2D) semiconductors are promising materials for next-generation electronic and iontronic devices. As a consequence of their ultrathin dimensions, 2D materials offer the opportunity for continued device scaling while avoiding the short-channel effects that hinder bulk semiconductors.