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IRG-2 has established the controlled tip-based absorption (writing) and desorption (deleting) of hydrogen on C/Si/Ge/Sn graphene materials at atomic length scales. This allows new explorations on the effect of spatial patterns on a 2D material on the electronic transport properties in an ultraclean environment.

Lattice defects play an important role in determining the optical and electrical properties of monolayer semiconductors such as MoS2. Although the structures of various defects in monolayer MoS2 are well studied, little is known about the properties of the fluorescent defect species and their interaction with molecular adsorbates.

In solution-based synthesis, often doping efficiencies are low and dopants are excluded from the nanocrystals’ central cores. The research team developed a fundamentally different plasma-based process for synthesizing aluminum-doped zinc oxide nanocrystals.

Wisconsin MRSEC researchers have developed a method to synthesize materials with precisely controlled crystal structures, even when the same atoms could arrange themselves into a different structure with nearly the same energy. The methods allow them to make highly perfect films of cubic aluminum oxide with widespread applications in electronic materials, catalysis, and surface passivation.

This work represents the first study to establish fluoride as a universal amorphizing agent in the  indium oxide system, and by inference, may play a similar role in related oxide semiconductor materials.

Defects in liquid crystals can function as nanoscopic molds for assembling molecules