AlN, deposited by molecular beam epitaxy and patterned by electron beam lithography, forms an effective capping layer for epitaxial graphene growth on C-face SiC.
AlN, deposited by molecular beam epitaxy and patterned by electron beam lithography, forms an effective capping layer for epitaxial graphene growth on C-face SiC.
The list of potential curricular connections and activities that can be done with a wind tunnel in middle school is almost endless. This project incorporates simple geometry, weather, lab skills, metric measurement, as well as having the students work through the design process and actually construct and test their creations.
Sn whiskers are a serious reliability problem in Pb-free electronics manufacturing. Whiskers (as in fig. 1) grow out of pure Sn coatings and have been responsible for numerous system failures, such as the Galaxy IV satellite.
Graphene, an atomic layer of carbon atoms arranged in a honeycomb lattice, is actively being pursued as a material for next-generation electronics because of the high mobility of charge carriers and the potential to control their density by applying a gate voltage.
The Renewable Energy MRSEC at the Colorado School of Mines held a ten week Research Experiences for Undergraduates program on renewable energy in which over half of the 20 students were women.
Silicon nanoparticles are promising new materials for photovoltaic applications that combine materials property tunability on the nanoscale with silicon’s established performance in photovoltaics. We have succeeded in synthesizing crystalline silicon nanoparticles in a continuous flow plasma reactor and established control over particle size.