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Highlights

Highlights

Mar 12, 2012
University of Nebraska - Lincoln

Enhanced Ferroelectric Stability by Interface Engineering

A. Gruverman and E. Y. Tsymbal (Nebraska MRSEC); C.-B. Eom (University of Wisconsin); X. Pan (University of Michigan)
Ferroelectric materials are characterized by a spontaneous polarization that can be switched by external electric field. This property is important for various technological applications such ferroelectric random access memories. However, when ferroelectric film thickness is reduced down to a nanoscale the ferroelectric polarization may become unstable due to strong depolarization fields and interface effects.
Mar 12, 2012
Ohio State University

Probing Genomic Materials with Magnetic Resonance

Min Gao1, Richelle Teeling1, Morgan Welsh1, Philippe Nadaud1, Chris Hammel1, Chris Jaroniec1, Michael Poirier11Center for Emergent Materials, The Ohio State University, 191 W. Woodruff Ave, Columbus, OH 43210
Mar 12, 2012
Ohio State University

Little Scientists in Action

Marci Howdyshell1, Michelle McCombs1, Nandini Trivedi1 & Katharine Flores11Center for Emergent Materials, The Ohio State University, 191 W. Woodruff Ave, Columbus OH, 43210
Mar 12, 2012
Ohio State University

New measurements show that the spin-Seebeck effect is driven by phonons

Mar 12, 2012
Ohio State University

Modeling the Magnetic Properties of Both Insulating and Metallic Double Perovskites

Mohit Randeria1, Nandini Trivedi1, Onur Erten1, O.N. Meetei1, Anamitra Mukherjee1, & Patrick Woodward11Center for Emergent Materials, The Ohio State University, 191 W. Woodruff Ave., Columbus, OH 43210
Mar 12, 2012
Ohio State University

New materials for the spintronic toolbox

Fengyuan Yang1, Adam Hauser1, Hamish Fraser1, Robert Williams1, Manisha Genc1, Jennifer Soliz1, & Patrick Woodward11Center for Emergent Materials, The Ohio State University, 191 W. Woodruff Ave, Columbus OH, 43210
Mar 12, 2012
Ohio State University

Addressing Misconceptions in an Introduction to Materials Science & Engineering Course

R. Rosenblatt1 and A.F. Heckler11Center for Emergent Materials, The Ohio State University, 191 W. Woodruff Ave. Columbus, OH 43210
Mar 12, 2012
Ohio State University

Gating Individual Dopants with an Individual Defect in Semiconductors

One factor limiting the scaling and reproducibility of device elements in computer processors is the random distribution of dopants in semiconductor nanostructures. To overcome this obstacle for faster computing, new ways to position and address individual dopants are needed. Proposals for next-generation computing based on quantum variables such as electron spin also require the ability to address and control interactions between individual atoms.
Mar 12, 2012
Ohio State University

Integrating Magnetic Plastics Into Next-Generation Electronic Devices

Scientists researching electronic devices that promise to extend current technologies beyond the ITRS roadmap – the industry generated timeline for the development of silicon-based electronics – have for some time focused on the potential for the field of “spintronics” to deliver fast, low-power computing. However, progress in the area of computer
Feb 27, 2012
University of Colorado at Boulder

Shape-Controlled Colloidal Interactions In Liquid Crystals

When an object, such as a colloidal particle, is put into a liquid crystal, it alters the otherwise uniform orientation of the molecules, creating a field of orientational disturbance around itself. This field acts on the object to align it with particular orientation relative to the average liquid crystal direction, indicated by the arrows in the image.

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