Highlights
Jul 19, 2007
Yale University
Crystalline oxides on silicon
Yale: Jim Reiner, Fred Walker, T.P. Ma, Agham Posadas, Miamiao Wang, Charles Ahn AMD: Zoran Krivokapic; Spansion: Max Sidorov
Researchers at Yale University have invented a high-performance material for future generations of transistors and devices. New oxide materials are required to make faster computer chips for the future. These new oxides will replace the oxide that has been the standard for the last 50 years, silicon dioxide. To replace silicon dioxide, these new oxides must perform better by having a large dielectric constant and a small leakage current. The oxide LaAlO3 has a dielectric constant that is six times larger than that of silicon dioxide.
Jun 22, 2007
Massachusetts Institute of Technology
Power transfer goes cordless
Members of IRG-I of the MIT MRSEC have recently demonstrated wireless transfers of power on the order of 60W over distances greater than 7 feet, with efficiency of roughly 50%, confirming the predictions of an earlier theoretical paper. The power transfer scheme proposed, dubbed "WiTricity," could be used for wireless charging of autonomous electronic devices (e.g. laptops, cell-phones, iPods).
May 31, 2007
Johns Hopkins University
A New Generation of Spintronic Devices: MgO Magnetic Tunneling Junctions
We developed a low-pressure magnetron sputtering technique together with the linear dynamic deposition method and successfully fabricated a new type of magnetic tunneling junctions (MTJs) with (001) textured MgO barrier. We are the only US university to have achieved this success as of April 2007.
May 31, 2007
Johns Hopkins University
Secondary Teacher Interacting with Materials Professors Strikes Gold
Background: The JHU MRSEC conducts extensive K-12 educational outreach programs aimed at promoting interest in and awareness of the importance of modern materials research. The MRSEC's Research Experience for Teachers (RET) program provides high school teacher the opportunity to conduct research in MRSEC and to use the MRSEC's resources for the development of classroom modules or other materials.
May 31, 2007
Johns Hopkins University
Domains and Domain Wall Motion in Perpendicular Anisotropy Materials
Magnetic thin films with perpendicular magnetic anisotropy (PMA) have special attributes for explorations and perpendicular magnetic recording. We have observed three hitherto unknown new features in materials with PMA:
1. Asymmetrical domain nucleation centers that produce domains for only one magnetization direction (Fig. 1).
2. The backward domain wall motion of the asymmetrical nucleation centers is much faster than that of the forward motion.
3. Magnetic domains with a fixed boundary but fading contrast.
May 30, 2007
University of Maryland - College Park
Molecular Nano-Ring Beats Like a Chime
Chenggang Tao, T. Stasevich, W.G. Cullen, T.L. Einstein and E.D. Williams
Perfect rings of C60 molecules, lined up around circular layers of silver, reveal an important property of nanoelectronic contacts: thermal energy causes the structures to fluctuate. The movement of the molecules in the rings is captured by making repeated ("time-lapse") STM images.
May 30, 2007
University of Maryland - College Park
Novel multiferroic thin film memory devices
Electric-field tunable spin valves are being investigated
Exchange bias at ferromagnet/multiferroic interfaces has been studied for various thin film and bulk multiferroics including BiFeO3, TbMnO3, LuMnO3, and Cr2O3. Tunable spin valve structures are being explored. Magnetoresistance devices using BiFeO3 as the exchange biasing layer have been demonstrated.
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